FDMS3600S
SMALL SIGNAL FIELD-EFFECT TRANSI
Transistors Fets Mosfets Arrays
8-PowerTDFN
PowerTrench®
Active
$1.09 / unit (market reference)
MOQ: 275 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FDMS3600S |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| Drain to Source Voltage (Vdss) | 25V |
| Rds On (Max) | 5.6mOhm @ 15A, 10V, 1.6mOhm @ 30A, 10V |
| Vgs(th) (Max) | 2.7V @ 250µA, 3V @ 1mA |
| Gate Charge (Qg) | 27nC @ 10V, 82nC @ 10V |
| Input Capacitance (Ciss) | 1680pF @13V, 5375pF @ 13V |
| Power Dissipation (Max) | 2.2W (Ta), 2.5W (Ta) |
| Supplier Device Package | 8-PQFN (5x6) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FDMS3600S by Rochester Electronics, LLC is an N-channel power MOSFET rated at 25V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 5.6mOhm @ 15A, 10V, 1.6mOhm @ 30A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FDMS3600S
Alternatives & Replacements
View All →NTMFD4C86NT3G
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FDMS3616S
SMALL SIGNAL N-CHANNEL MOSFET
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MOSFET 2N-CH 30V 8DFN
BSC0924NDIATMA1
MOSFET 2N-CH 30V 17A/32A TISON8
All Technical Specifications
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Standard |
| Power - Max | 2.2W (Ta), 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.7V @ 250µA, 3V @ 1mA |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 15A, 10V, 1.6mOhm @ 30A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V, 82nC @ 10V |
| Drain to Source Voltage (Vdss) | 25V |
| Input Capacitance (Ciss) (Max) @ Vds | 1680pF @13V, 5375pF @ 13V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta), 30A (Tc), 30A (Ta), 40A (Tc) |
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