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Flip Electronics8-PowerWDFNRoHS

FDMS001N025DSD

MOSFET 2N-CH 25V 8PQFN

Subcategory

Transistors Fets Mosfets Arrays

Package

8-PowerWDFN

Series

PowerTrench®

Status

Obsolete

$1.12 / unit (market reference)

MOQ: 268 pcs

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Parameters

ParameterValue
BrandFlip Electronics
ModelFDMS001N025DSD
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET Type2 N-Channel (Dual) Asymmetrical
Drain to Source Voltage (Vdss)25V
Rds On (Max)3.25mOhm @ 19A, 10V, 920µOhm @ 38A, 10V
Vgs(th) (Max)2.5V @ 320µA, 3V @ 1mA
Gate Charge (Qg)30nC @ 10V, 104nC @ 10V
Input Capacitance (Ciss)1370pF @ 13V, 5105pF @ 13V
Power Dissipation (Max)2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc)
Supplier Device Package8-PQFN (5x6)
RoHSRoHS
Part StatusObsolete

Application & Notes

FDMS001N025DSD by Flip Electronics is an N-channel power MOSFET rated at 25V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerWDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.25mOhm @ 19A, 10V, 920µOhm @ 38A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET Type2 N-Channel (Dual) Asymmetrical
FET FeatureStandard
Power - Max2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id2.5V @ 320µA, 3V @ 1mA
Rds On (Max) @ Id, Vgs3.25mOhm @ 19A, 10V, 920µOhm @ 38A, 10V
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V, 104nC @ 10V
Drain to Source Voltage (Vdss)25V
Input Capacitance (Ciss) (Max) @ Vds1370pF @ 13V, 5105pF @ 13V
Current - Continuous Drain (Id) @ 25°C19A (Ta), 69A (Tc), 38A (Ta), 165A (Tc)

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