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Rochester Electronics, LLCTO-262-3 Long Leads, I²Pak, TO-262AARoHS

FDI9406-F085

FDI9406 - N-CHANNEL POWERTRENCH

Subcategory

Transistors Fets Mosfets Single

Package

TO-262-3 Long Leads, I²Pak, TO-262AA

Series

Automotive, AEC-Q101, PowerTrench®

Status

Active

$1.21 / unit (market reference)

MOQ: 249 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelFDI9406-F085
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)40 V
Rds On (Max)2.2mOhm @ 80A, 10V
Vgs(th) (Max)4V @ 250µA
Gate Charge (Qg)138 nC @ 10 V
Input Capacitance (Ciss)7710 pF @ 25 V
Power Dissipation (Max)176W (Tj)
Drive Voltage10V
Supplier Device PackageI2PAK (TO-262)
RoHSRoHS
Part StatusActive

Application & Notes

FDI9406-F085 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 40 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-262-3 Long Leads, I²Pak, TO-262AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 2.2mOhm @ 80A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA
Rds On (Max) @ Id, Vgs2.2mOhm @ 80A, 10V
Power Dissipation (Max)176W (Tj)
Gate Charge (Qg) (Max) @ Vgs138 nC @ 10 V
Drain to Source Voltage (Vdss)40 V
Input Capacitance (Ciss) (Max) @ Vds7710 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C110A (Tc)

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