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Rochester Electronics, LLCSOT-23-6 Thin, TSOT-23-6RoHS

FDFC2P100

MOSFET P-CH 20V 3A SUPERSOT6

FDFC2P100 by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

SOT-23-6 Thin, TSOT-23-6

Series

PowerTrench®

Status

Obsolete

Datasheet

View Datasheet ↗

$0.17 / unit (market reference)

MOQ: 1803 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelFDFC2P100
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)150mOhm @ 3A, 4.5V
Vgs(th) (Max)1.5V @ 250µA
Gate Charge (Qg)4.7 nC @ 10 V
Input Capacitance (Ciss)445 pF @ 10 V
Power Dissipation (Max)1.5W (Ta)
Drive Voltage2.5V, 4.5V
Supplier Device PackageSuperSOT™-6
RoHSRoHS
Part StatusObsolete

Application & Notes

FDFC2P100 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 Thin, TSOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 150mOhm @ 3A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for FDFC2P100

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

Alternatives & Replacements

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Rochester Electronics, LLCStockSOT-23-6 Thin, TSOT-23-6

FDC633N

MOSFET N-CH 30V 5.2A SUPERSOT6

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Infineon TechnologiesStockSOT-23-6 Thin, TSOT-23-6

BSL307SPL6327HTSA1

MOSFET P-CH 30V 5.5A TSOP-6

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Rochester Electronics, LLCStockSOT-23-6 Thin, TSOT-23-6

CPH6355-TL-W

SINGLE P-CHANNEL POWER MOSFET, -

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Rochester Electronics, LLCStockSOT-23-6 Thin, TSOT-23-6

FDC655AN

MOSFET N-CH 30V 6.3A SUPERSOT6

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Rochester Electronics, LLCStockSOT-23-6 Thin, TSOT-23-6

SI3457DV

SMALL SIGNAL FIELD-EFFECT TRANSI

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onsemiStockSOT-23-6 Thin, TSOT-23-6

NTGD4169FT1G

MOSFET N-CH 30V 2.6A 6TSOP

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All Technical Specifications

FET TypeP-Channel
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
FET FeatureSchottky Diode (Isolated)
Vgs(th) (Max) @ Id1.5V @ 250µA
Rds On (Max) @ Id, Vgs150mOhm @ 3A, 4.5V
Power Dissipation (Max)1.5W (Ta)
Gate Charge (Qg) (Max) @ Vgs4.7 nC @ 10 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds445 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C3A (Ta)

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