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onsemiSOT-23-6 Thin, TSOT-23-6RoHS

FDC855N

MOSFET N-CH 30V 6.1A SUPERSOT6

FDC855N by onsemi
Subcategory

Transistors Fets Mosfets Single

Package

SOT-23-6 Thin, TSOT-23-6

Series

PowerTrench®

Status

Active

Datasheet

View Datasheet ↗

$0.71 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
Brandonsemi
ModelFDC855N
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)27mOhm @ 6.1A, 10V
Vgs(th) (Max)3V @ 250µA
Gate Charge (Qg)13 nC @ 10 V
Input Capacitance (Ciss)655 pF @ 15 V
Power Dissipation (Max)1.6W (Ta)
Drive Voltage4.5V, 10V
Supplier Device PackageSuperSOT™-6
RoHSRoHS
Part StatusActive

Application & Notes

FDC855N by onsemi is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 Thin, TSOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 27mOhm @ 6.1A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for FDC855N

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Components Guide

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

Alternatives & Replacements

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Rochester Electronics, LLCStockSOT-23-6 Thin, TSOT-23-6

FDC633N

MOSFET N-CH 30V 5.2A SUPERSOT6

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Infineon TechnologiesStockSOT-23-6 Thin, TSOT-23-6

BSL307SPL6327HTSA1

MOSFET P-CH 30V 5.5A TSOP-6

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Rochester Electronics, LLCStockSOT-23-6 Thin, TSOT-23-6

CPH6355-TL-W

SINGLE P-CHANNEL POWER MOSFET, -

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Rochester Electronics, LLCStockSOT-23-6 Thin, TSOT-23-6

FDC655AN

MOSFET N-CH 30V 6.3A SUPERSOT6

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Rochester Electronics, LLCStockSOT-23-6 Thin, TSOT-23-6

SI3457DV

SMALL SIGNAL FIELD-EFFECT TRANSI

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onsemiStockSOT-23-6 Thin, TSOT-23-6

NTGD4169FT1G

MOSFET N-CH 30V 2.6A 6TSOP

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA
Rds On (Max) @ Id, Vgs27mOhm @ 6.1A, 10V
Power Dissipation (Max)1.6W (Ta)
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds655 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C6.1A (Ta)

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