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Flip ElectronicsTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

FDB9406L-F085

MOSFET N-CH 40V 110A D2PAK

Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Series

Automotive, AEC-Q101, PowerTrench®

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandFlip Electronics
ModelFDB9406L-F085
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)40 V
Rds On (Max)1.5mOhm @ 80A, 10V
Vgs(th) (Max)3V @ 250µA
Gate Charge (Qg)170 nC @ 10 V
Input Capacitance (Ciss)8600 pF @ 20 V
Power Dissipation (Max)176W (Tj)
Drive Voltage4.5V, 10V
Supplier Device PackageD²PAK (TO-263)
RoHSRoHS
Part StatusObsolete

Application & Notes

FDB9406L-F085 by Flip Electronics is an N-channel power MOSFET rated at 40 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.5mOhm @ 80A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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FDB8442-F085onsemi

MOSFET N-CH 40V 28A TO263AB

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA
Rds On (Max) @ Id, Vgs1.5mOhm @ 80A, 10V
Power Dissipation (Max)176W (Tj)
Gate Charge (Qg) (Max) @ Vgs170 nC @ 10 V
Drain to Source Voltage (Vdss)40 V
Input Capacitance (Ciss) (Max) @ Vds8600 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C110A (Tc)

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