PC
Rochester Electronics, LLCTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

FDB6670S

N-CHANNEL POWER MOSFET

FDB6670S by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Series

PowerTrench®

Status

Active

$2.49 / unit (market reference)

MOQ: 121 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelFDB6670S
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)8.5mOhm@ 31A, 10V
Vgs(th) (Max)3V @ 1mA
Gate Charge (Qg)32 nC @ 5 V
Input Capacitance (Ciss)2639 pF @ 15 V
Power Dissipation (Max)62.5W (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackageTO-263AB
RoHSRoHS
Part StatusActive

Application & Notes

FDB6670S by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 8.5mOhm@ 31A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 1mA
Rds On (Max) @ Id, Vgs8.5mOhm@ 31A, 10V
Power Dissipation (Max)62.5W (Tc)
Gate Charge (Qg) (Max) @ Vgs32 nC @ 5 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds2639 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C62A (Ta)

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