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onsemiTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

FDB6021P

MOSFET P-CH 20V 28A TO263AB

FDB6021P by onsemi
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Series

PowerTrench®

Status

Obsolete

Datasheet

View Datasheet ↗

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
Brandonsemi
ModelFDB6021P
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-65°C ~ 175°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)30mOhm @ 14A, 4.5V
Vgs(th) (Max)1.5V @ 250µA
Gate Charge (Qg)28 nC @ 4.5 V
Input Capacitance (Ciss)1890 pF @ 10 V
Power Dissipation (Max)37W (Tc)
Drive Voltage1.8V, 4.5V
Supplier Device PackageD²PAK (TO-263)
RoHSRoHS
Part StatusObsolete

Application & Notes

FDB6021P by onsemi is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 30mOhm @ 14A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for FDB6021P

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MOSFET Alternatives: IRFZ44N, AO3400, IRF4905 & More — Cross Reference Guide

Components Guide

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

Alternatives & Replacements

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onsemiStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FDB8442-F085

MOSFET N-CH 40V 28A TO263AB

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NTB90N02T4

MOSFET N-CH 24V 90A D2PAK

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Infineon TechnologiesStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB65R225C7ATMA1

MOSFET N-CH 650V 11A D2PAK

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Rochester Electronics, LLCStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FDB6035AL

N-CHANNEL POWER MOSFET

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Rochester Electronics, LLCStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

AUIRF3710ZSTRR

MOSFET N-CH 100V 59A D2PAK

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Infineon TechnologiesStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SPB80N03S2L-05

MOSFET N-CH 30V 80A TO263-3

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All Technical Specifications

FET TypeP-Channel
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 250µA
Rds On (Max) @ Id, Vgs30mOhm @ 14A, 4.5V
Power Dissipation (Max)37W (Tc)
Gate Charge (Qg) (Max) @ Vgs28 nC @ 4.5 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds1890 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C28A (Ta)

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