PC
Rochester Electronics, LLCTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

FDB3652-F085

N-CHANNEL POWERTRENCH MOSFET, 10

FDB3652-F085 by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Series

Automotive, AEC-Q101, PowerTrench®

Status

Active

$1.52 / unit (market reference)

MOQ: 198 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelFDB3652-F085
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)100 V
Rds On (Max)16mOhm @ 61A, 10V
Vgs(th) (Max)4V @ 250µA
Gate Charge (Qg)53 nC @ 10 V
Input Capacitance (Ciss)2880 pF @ 25 V
Power Dissipation (Max)150W (Tc)
Drive Voltage6V, 10V
Supplier Device PackageD²PAK (TO-263)
RoHSRoHS
Part StatusActive

Application & Notes

FDB3652-F085 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 16mOhm @ 61A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA
Rds On (Max) @ Id, Vgs16mOhm @ 61A, 10V
Power Dissipation (Max)150W (Tc)
Gate Charge (Qg) (Max) @ Vgs53 nC @ 10 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds2880 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C9A (Ta), 61A (Tc)

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