IGBT MOD 1200V 580A 2000W

Transistors Igbts Modules
Module
Active
$128.77 / unit (market reference)
MOQ: 3 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FD400R12KE3B5HOSA1 |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 125°C |
| Power Dissipation (Max) | 2000 W |
| Supplier Device Package | Module |
| RoHS | RoHS |
| Part Status | Active |
FD400R12KE3B5HOSA1 by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
IGBT MOD 1200V 170A 690W
IGBT MODULE 600V 65A 175W
IGBT MODULE 600V 20A 81W
IGBT MOD 1200V 320A 1100W
IGBT MOD 1200V 20A 145W
IGBT MOD 1200V 115A 460W
| Input | Standard |
| IGBT Type | Trench Field Stop |
| Power - Max | 2000 W |
| Configuration | Single Chopper |
| NTC Thermistor | No |
| Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 400A |
| Current - Collector (Ic) (Max) | 580 A |
| Input Capacitance (Cies) @ Vce | 28 nF @ 25 V |
| Current - Collector Cutoff (Max) | 5 mA |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
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