F445MR12W1M1B76BPSA1
MOSFET MODULE
Transistors Fets Mosfets Arrays
Module
EasyPACK™ CoolSiC™
Obsolete
$74.96 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | F445MR12W1M1B76BPSA1 |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Type | 4 N-Channel (Half Bridge) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Rds On (Max) | 45mOhm @ 25A, 15V |
| Vgs(th) (Max) | 5.55V @ 10mA |
| Gate Charge (Qg) | 62nC @ 15V |
| Input Capacitance (Ciss) | 1.84nF @ 800V |
| Supplier Device Package | AG-EASY1B-2 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
F445MR12W1M1B76BPSA1 by Infineon Technologies is an N-channel power MOSFET rated at 1200V (1.2kV) / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 45mOhm @ 25A, 15V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for F445MR12W1M1B76BPSA1
Alternatives & Replacements
View All →FF23MR12W1M1B11BOMA1
MOSFET 2 N-CH 1200V 50A MODULE
CAS120M12BM2
MOSFET 2N-CH 1200V 193A MODULE
DF11MR12W1M1B11BOMA1
MOSFET MODULE 1200V 50A
FF11MR12W1M1PB11BPSA1
MOSFET MODULE 1200V DUAL
DF23MR12W1M1B11BPSA1
MOSFET MOD 1200V 25A
FF11MR12W1M1B11BOMA1
MOSFET 2N-CH 1200V 100A MODULE
All Technical Specifications
| FET Type | 4 N-Channel (Half Bridge) |
| FET Feature | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 5.55V @ 10mA |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 25A, 15V |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 15V |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 1.84nF @ 800V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tj) |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.