PC
Infineon TechnologiesModuleRoHS

F415MR12W2M1B76BOMA1

LOW POWER EASY AG-EASY2B-2

Subcategory

Transistors Fets Mosfets Arrays

Package

Module

Series

EasyPACK™ CoolSiC™

Status

Active

$284.06 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandInfineon Technologies
ModelF415MR12W2M1B76BOMA1
Package / CaseModule
Mounting TypeChassis Mount
Operating Temperature-40°C ~ 150°C (TJ)
FET Type4 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Rds On (Max)15mOhm @ 75A, 15V
Vgs(th) (Max)5.55V @ 30mA
Gate Charge (Qg)186nC @ 15V
Input Capacitance (Ciss)5.52nF @ 800V
Supplier Device PackageAG-EASY1B-2
RoHSRoHS
Part StatusActive

Application & Notes

F415MR12W2M1B76BOMA1 by Infineon Technologies is an N-channel power MOSFET rated at 1200V (1.2kV) / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 15mOhm @ 75A, 15V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET Type4 N-Channel (Half Bridge)
FET FeatureSilicon Carbide (SiC)
Vgs(th) (Max) @ Id5.55V @ 30mA
Rds On (Max) @ Id, Vgs15mOhm @ 75A, 15V
Gate Charge (Qg) (Max) @ Vgs186nC @ 15V
Drain to Source Voltage (Vdss)1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds5.52nF @ 800V
Current - Continuous Drain (Id) @ 25°C75A (Tj)

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