EPCDieRoHS
EPC2100
GAN TRANS ASYMMETRICAL HALF BRID
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
Die
Series
eGaN®
Status
Active
$6.94 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | EPC |
| Model | EPC2100 |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Half Bridge) |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V |
| Vgs(th) (Max) | 2.5V @ 4mA, 2.5V @ 16mA |
| Gate Charge (Qg) | 4.9nC @ 15V, 19nC @ 15V |
| Input Capacitance (Ciss) | 475pF @ 15V, 1960pF @ 15V |
| Supplier Device Package | Die |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
EPC2100 by EPC is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Die package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | GaNFET (Gallium Nitride) |
| Vgs(th) (Max) @ Id | 2.5V @ 4mA, 2.5V @ 16mA |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V |
| Gate Charge (Qg) (Max) @ Vgs | 4.9nC @ 15V, 19nC @ 15V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 475pF @ 15V, 1960pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 40A (Ta) |
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