Rochester Electronics, LLC8-SMD, Flat LeadRoHS
ECH8411-TL-E
MOSFET N-CH 20V 9A 8ECH
Category
Subcategory
Transistors Fets Mosfets Single
Package
8-SMD, Flat Lead
Status
Obsolete
$0.19 / unit (market reference)
MOQ: 1603 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | ECH8411-TL-E |
| Package / Case | 8-SMD, Flat Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 16mOhm @ 4A, 4V |
| Gate Charge (Qg) | 21 nC @ 4 V |
| Input Capacitance (Ciss) | 1740 pF @ 10 V |
| Power Dissipation (Max) | 1.4W (Ta) |
| Supplier Device Package | 8-ECH |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
ECH8411-TL-E by Rochester Electronics, LLC is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SMD, Flat Lead package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 16mOhm @ 4A, 4V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for ECH8411-TL-E
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All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 4A, 4V |
| Power Dissipation (Max) | 1.4W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 4 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1740 pF @ 10 V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
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