onsemi8-SMD, Flat LeadRoHS
NTHS2101PT1
MOSFET P-CH 8V 5.4A CHIPFET
Category
Subcategory
Transistors Fets Mosfets Single
Package
8-SMD, Flat Lead
Status
Obsolete
$0.15 / unit (market reference)
MOQ: 2061 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | NTHS2101PT1 |
| Package / Case | 8-SMD, Flat Lead |
| Mounting Type | Surface Mount |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 8 V |
| Rds On (Max) | 25mOhm @ 5.4A, 4.5V |
| Vgs(th) (Max) | 1.5V @ 250µA |
| Gate Charge (Qg) | 30 nC @ 4.5 V |
| Input Capacitance (Ciss) | 2400 pF @ 6.4 V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Drive Voltage | 1.8V, 4.5V |
| Supplier Device Package | ChipFET™ |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
NTHS2101PT1 by onsemi is an N-channel power MOSFET rated at 8 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SMD, Flat Lead package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 25mOhm @ 5.4A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 5.4A, 4.5V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 6.4 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Tj) |
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