DMT3020LFDB-7
MOSFET 2N-CHA 30V 7.7A DFN2020
Transistors Fets Mosfets Arrays
6-UDFN Exposed Pad
Automotive, AEC-Q101
Active
$0.70 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Diodes Incorporated |
| Model | DMT3020LFDB-7 |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 20mOhm @ 9A, 10V |
| Vgs(th) (Max) | 3V @ 250µA |
| Gate Charge (Qg) | 7nC @ 10V |
| Input Capacitance (Ciss) | 393pF @ 15V |
| Power Dissipation (Max) | 700mW |
| Supplier Device Package | U-DFN2020-6 (Type B) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
DMT3020LFDB-7 by Diodes Incorporated is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-UDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 20mOhm @ 9A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for DMT3020LFDB-7
Alternatives & Replacements
View All →PMDPB95XNE,115
MOSFET 2N-CH 30V 2.4A HUSON6
PMDPB42UN,115
MOSFET 2N-CH 20V 3.9A HUSON6
DMN1029UFDB-7
MOSFET 2N-CH 12V 5.6A 6UDFN
PMDPB38UNE,115
MOSFET 2N-CH 20V 4A HUSON6
DMP2160UFDB-7
MOSFET 2P-CH 20V 3.8A 6UDFN
NTLUD3A50PZTBG
MOSFET 2P-CH 20V 2.8A 6UDFN
All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 700mW |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 393pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 7.7A |
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