NXP USA Inc.6-UDFN Exposed PadRoHS
PMDPB95XNE,115
MOSFET 2N-CH 30V 2.4A HUSON6
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
6-UDFN Exposed Pad
Status
Obsolete
Datasheet
$0.06 / unit (market reference)
MOQ: 4808 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | NXP USA Inc. |
| Model | PMDPB95XNE,115 |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 120mOhm @ 2A, 4.5V |
| Vgs(th) (Max) | 1.5V @ 250µA |
| Gate Charge (Qg) | 2.5nC @ 4.5V |
| Input Capacitance (Ciss) | 143pF @ 15V |
| Power Dissipation (Max) | 475mW |
| Supplier Device Package | 6-HUSON (2x2) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
PMDPB95XNE,115 by NXP USA Inc. is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-UDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 120mOhm @ 2A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for PMDPB95XNE,115
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 475mW |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 143pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 2.4A |
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