Diodes IncorporatedSOT-563, SOT-666RoHS
DMP56D0UV-7
MOSFET 2P-CH 50V 0.16A SOT563
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
SOT-563, SOT-666
Status
Active
Datasheet
$0.52 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Diodes Incorporated |
| Model | DMP56D0UV-7 |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 50V |
| Rds On (Max) | 6Ohm @ 100mA, 4V |
| Vgs(th) (Max) | 1.2V @ 250µA |
| Gate Charge (Qg) | 0.58nC @ 4V |
| Input Capacitance (Ciss) | 50.54pF @ 25V |
| Power Dissipation (Max) | 400mW |
| Supplier Device Package | SOT-563 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
DMP56D0UV-7 by Diodes Incorporated is an N-channel power MOSFET rated at 50V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-563, SOT-666 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 6Ohm @ 100mA, 4V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for DMP56D0UV-7
Alternatives & Replacements
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FDY2000PZ
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All Technical Specifications
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 400mW |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 100mA, 4V |
| Gate Charge (Qg) (Max) @ Vgs | 0.58nC @ 4V |
| Drain to Source Voltage (Vdss) | 50V |
| Input Capacitance (Ciss) (Max) @ Vds | 50.54pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 160mA |
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