DMP21D6UFB4-7B
MOSFET P-CH 20V 580MA 3DFN
Transistors Fets Mosfets Single
3-XFDFN
Active
$0.39 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Diodes Incorporated |
| Model | DMP21D6UFB4-7B |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 1Ohm @ 100mA, 4.5V |
| Vgs(th) (Max) | 1V @ 250µA |
| Gate Charge (Qg) | 0.8 nC @ 8 V |
| Input Capacitance (Ciss) | 46.1 pF @ 10 V |
| Power Dissipation (Max) | 510mW (Ta) |
| Drive Voltage | 1.8V, 4.5V |
| Supplier Device Package | X2-DFN1006-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
DMP21D6UFB4-7B by Diodes Incorporated is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 3-XFDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1Ohm @ 100mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for DMP21D6UFB4-7B
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 100mA, 4.5V |
| Power Dissipation (Max) | 510mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 0.8 nC @ 8 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 46.1 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 580mA (Ta) |
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