Diodes Incorporated8-TSSOP (0.173", 4.40mm Width)RoHS
DMN3020UTS-13
MOSFET N-CH 30V 15A 8TSSOP
Category
Subcategory
Transistors Fets Mosfets Single
Package
8-TSSOP (0.173", 4.40mm Width)
Status
Active
Datasheet
$0.61 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Diodes Incorporated |
| Model | DMN3020UTS-13 |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 20mOhm @ 4.5A, 4.5V |
| Vgs(th) (Max) | 1V @ 250µA |
| Gate Charge (Qg) | 27 nC @ 8 V |
| Input Capacitance (Ciss) | 1304 pF @ 15 V |
| Power Dissipation (Max) | 1.4W (Ta) |
| Drive Voltage | 1.8V, 4.5V |
| Supplier Device Package | 8-TSSOP |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
DMN3020UTS-13 by Diodes Incorporated is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-TSSOP (0.173", 4.40mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 20mOhm @ 4.5A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for DMN3020UTS-13
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 4.5A, 4.5V |
| Power Dissipation (Max) | 1.4W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 8 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1304 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
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