Diodes Incorporated8-PowerTDFNRoHS
DMC1017UPD-13
MOSFET N/P-CH 12V 9.5A/6.9A SMD
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
8-PowerTDFN
Series
Automotive, AEC-Q101
Status
Obsolete
Datasheet
$0.42 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Diodes Incorporated |
| Model | DMC1017UPD-13 |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N and P-Channel Complementary |
| Drain to Source Voltage (Vdss) | 12V |
| Rds On (Max) | 17mOhm @ 11.8A, 4.5V, 32mOhm @ 8.9A, 4.5V |
| Vgs(th) (Max) | 1.5V @ 250µA |
| Gate Charge (Qg) | 18.6nC @ 4.5V, 23.7nC @ 4.5V |
| Input Capacitance (Ciss) | 1787pF @ 6V, 2100pF @ 6V |
| Power Dissipation (Max) | 2.3W |
| Supplier Device Package | PowerDI5060-8 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
DMC1017UPD-13 by Diodes Incorporated is an N-channel power MOSFET rated at 12V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 17mOhm @ 11.8A, 4.5V, 32mOhm @ 8.9A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for DMC1017UPD-13
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All Technical Specifications
| FET Type | N and P-Channel Complementary |
| FET Feature | Standard |
| Power - Max | 2.3W |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 11.8A, 4.5V, 32mOhm @ 8.9A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 18.6nC @ 4.5V, 23.7nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 12V |
| Input Capacitance (Ciss) (Max) @ Vds | 1787pF @ 6V, 2100pF @ 6V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 9.4A (Ta) |
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