DF200R12PT4B6BOSA1
IGBT MOD 1200V 300A 1100W
Transistors Igbts Modules
Module
Active
$166.67 / unit (market reference)
MOQ: 2 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | DF200R12PT4B6BOSA1 |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C |
| Power Dissipation (Max) | 1100 W |
| Supplier Device Package | Module |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
DF200R12PT4B6BOSA1 by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for DF200R12PT4B6BOSA1
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BSM50GB120DLCHOSA1
IGBT MOD 1200V 115A 460W
All Technical Specifications
| Input | Standard |
| IGBT Type | Trench Field Stop |
| Power - Max | 1100 W |
| Configuration | Three Phase Inverter |
| NTC Thermistor | Yes |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 200A |
| Current - Collector (Ic) (Max) | 300 A |
| Input Capacitance (Cies) @ Vce | 12.5 nF @ 25 V |
| Current - Collector Cutoff (Max) | 15 µA |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
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