CSD86336Q3DT
SYNCHRONOUS BUCK NEXFET POWER BL
Transistors Fets Mosfets Arrays
8-PowerTDFN
NexFET™
Active
$2.01 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Texas Instruments |
| Model | CSD86336Q3DT |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 125°C |
| FET Type | 2 N-Channel (Half Bridge) |
| Drain to Source Voltage (Vdss) | 25V |
| Rds On (Max) | 9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V |
| Vgs(th) (Max) | 1.9V @ 250µA, 1.6V @ 250µA |
| Gate Charge (Qg) | 3.8nC @ 45V, 7.4nC @ 45V |
| Input Capacitance (Ciss) | 494pF @ 12.5V, 970pF @ 12.5V |
| Power Dissipation (Max) | 6W |
| Supplier Device Package | 8-VSON (3.3x3.3) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
CSD86336Q3DT by Texas Instruments is an N-channel power MOSFET rated at 25V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for CSD86336Q3DT
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All Technical Specifications
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | Logic Level Gate, 5V Drive |
| Power - Max | 6W |
| Vgs(th) (Max) @ Id | 1.9V @ 250µA, 1.6V @ 250µA |
| Rds On (Max) @ Id, Vgs | 9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V |
| Gate Charge (Qg) (Max) @ Vgs | 3.8nC @ 45V, 7.4nC @ 45V |
| Drain to Source Voltage (Vdss) | 25V |
| Input Capacitance (Ciss) (Max) @ Vds | 494pF @ 12.5V, 970pF @ 12.5V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
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