CSD17484F4T
MOSFET N-CH 30V 3A 3PICOSTAR
Transistors Fets Mosfets Single
3-XFDFN
FemtoFET™
Active
$0.93 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Texas Instruments |
| Model | CSD17484F4T |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 121mOhm @ 500mA, 8V |
| Vgs(th) (Max) | 1.1V @ 250µA |
| Gate Charge (Qg) | 0.2 nC @ 8 V |
| Input Capacitance (Ciss) | 195 pF @ 15 V |
| Power Dissipation (Max) | 500mW (Ta) |
| Drive Voltage | 1.8V, 8V |
| Supplier Device Package | 3-PICOSTAR |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
CSD17484F4T by Texas Instruments is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 3-XFDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 121mOhm @ 500mA, 8V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for CSD17484F4T
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | 12V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 121mOhm @ 500mA, 8V |
| Power Dissipation (Max) | 500mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 0.2 nC @ 8 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 195 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 8V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
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