MOSFET N-CH 35V 6A 6CPH

Transistors Fets Mosfets Single
SOT-23-6
Not For New Designs
$0.24 / unit (market reference)
MOQ: 3000 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | CPH6443-TL-H |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 35 V |
| Rds On (Max) | 37mOhm @ 3A, 10V |
| Gate Charge (Qg) | 10 nC @ 10 V |
| Input Capacitance (Ciss) | 470 pF @ 20 V |
| Power Dissipation (Max) | 1.6W (Ta) |
| Drive Voltage | 4V, 10V |
| Supplier Device Package | 6-CPH |
| RoHS | RoHS |
| Part Status | Not For New Designs |
CPH6443-TL-H by onsemi is an N-channel power MOSFET rated at 35 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 37mOhm @ 3A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
POWER FIELD-EFFECT TRANSISTOR, P
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| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 3A, 10V |
| Power Dissipation (Max) | 1.6W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 35 V |
| Input Capacitance (Ciss) (Max) @ Vds | 470 pF @ 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
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