IXYS Integrated Circuits DivisionTO-261-4, TO-261AARoHS
CPC3960ZTR
MOSFET N-CH 600V SOT223
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-261-4, TO-261AA
Status
Active
$0.83 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS Integrated Circuits Division |
| Model | CPC3960ZTR |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 125°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 600 V |
| Rds On (Max) | 44Ohm @ 100mA, 0V |
| Input Capacitance (Ciss) | 100 pF @ 25 V |
| Power Dissipation (Max) | 1.8W (Ta) |
| Drive Voltage | 0V |
| Supplier Device Package | SOT-223 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
CPC3960ZTR by IXYS Integrated Circuits Division is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-261-4, TO-261AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 44Ohm @ 100mA, 0V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
You may also need
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±15V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Depletion Mode |
| Rds On (Max) @ Id, Vgs | 44Ohm @ 100mA, 0V |
| Power Dissipation (Max) | 1.8W (Ta) |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 100 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 0V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.