Comchip Technology6-SMD, No LeadRoHS
CMSBN6601-HF
MOSFET DUAL N-CH 20VDS 12VGS 13A
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
6-SMD, No Lead
Status
Active
$0.50 / unit (market reference)
MOQ: 3000 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Comchip Technology |
| Model | CMSBN6601-HF |
| Package / Case | 6-SMD, No Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 11.5mOhm @ 3A, 4.5V |
| Vgs(th) (Max) | 1.3V @ 1mA |
| Gate Charge (Qg) | 25.4nC @ 10V |
| Power Dissipation (Max) | 2W (Ta) |
| Supplier Device Package | CSPB2718-6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
CMSBN6601-HF by Comchip Technology is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-SMD, No Lead package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 11.5mOhm @ 3A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1.3V @ 1mA |
| Rds On (Max) @ Id, Vgs | 11.5mOhm @ 3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 25.4nC @ 10V |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
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