SSM6N951L,EFF
SMALL SIGNAL MOSFET RDSON: 4.4MO
Transistors Fets Mosfets Arrays
6-SMD, No Lead
Active
$1.03 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | SSM6N951L,EFF |
| Package / Case | 6-SMD, No Lead |
| Mounting Type | Surface Mount |
| FET Type | 2 N-Channel (Dual) Common Drain |
| Drain to Source Voltage (Vdss) | 12V |
| Rds On (Max) | 5.1mOhm @ 8A, 4.5V |
| Supplier Device Package | 6-TCSPA (2.14x1.67) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SSM6N951L,EFF by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 12V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-SMD, No Lead package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 5.1mOhm @ 8A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SSM6N951L,EFF
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) Common Drain |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 5.1mOhm @ 8A, 4.5V |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
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