Comchip TechnologySOT-23-6RoHS
CMS02P06T6-HF
MOSFET P-CH 60V 2.4A SOT26
Category
Subcategory
Transistors Fets Mosfets Single
Package
SOT-23-6
Status
Obsolete
$0.15 / unit (market reference)
MOQ: 3000 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Comchip Technology |
| Model | CMS02P06T6-HF |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Rds On (Max) | 175mOhm @ 2A, 10V |
| Vgs(th) (Max) | 3V @ 250µA |
| Gate Charge (Qg) | 4.6 nC @ 4.5 V |
| Input Capacitance (Ciss) | 531 pF @ 15 V |
| Power Dissipation (Max) | 1.1W (Ta) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | SOT-23-6 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
CMS02P06T6-HF by Comchip Technology is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 175mOhm @ 2A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Rds On (Max) @ Id, Vgs | 175mOhm @ 2A, 10V |
| Power Dissipation (Max) | 1.1W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 4.6 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 531 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) |
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