Wolfspeed, Inc.ModuleRoHS
CCS020M12CM2
MOSFET 6N-CH 1200V 29.5A MODULE
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
Module
Series
Z-Rec®
Status
Not For New Designs
$255.60 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Wolfspeed, Inc. |
| Model | CCS020M12CM2 |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Type | 6 N-Channel (3-Phase Bridge) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Rds On (Max) | 98mOhm @ 20A, 20V |
| Vgs(th) (Max) | 2.2V @ 1mA (Typ) |
| Gate Charge (Qg) | 61.5nC @ 20V |
| Input Capacitance (Ciss) | 900pF @ 800V |
| Power Dissipation (Max) | 167W |
| Supplier Device Package | Module |
| RoHS | RoHS |
| Part Status | Not For New Designs |
Application & Notes
CCS020M12CM2 by Wolfspeed, Inc. is an N-channel power MOSFET rated at 1200V (1.2kV) / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 98mOhm @ 20A, 20V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | 6 N-Channel (3-Phase Bridge) |
| FET Feature | Silicon Carbide (SiC) |
| Power - Max | 167W |
| Vgs(th) (Max) @ Id | 2.2V @ 1mA (Typ) |
| Rds On (Max) @ Id, Vgs | 98mOhm @ 20A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 61.5nC @ 20V |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 800V |
| Current - Continuous Drain (Id) @ 25°C | 29.5A (Tc) |
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