Wolfspeed, Inc.TO-247-3RoHS
C2M0160120D
SICFET N-CH 1200V 19A TO247-3
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-247-3
Series
Z-FET™
Status
Not For New Designs
$13.12 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Wolfspeed, Inc. |
| Model | C2M0160120D |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 1200 V |
| Rds On (Max) | 196mOhm @ 10A, 20V |
| Vgs(th) (Max) | 2.5V @ 500µA |
| Gate Charge (Qg) | 32.6 nC @ 20 V |
| Input Capacitance (Ciss) | 527 pF @ 800 V |
| Power Dissipation (Max) | 125W (Tc) |
| Drive Voltage | 20V |
| Supplier Device Package | TO-247-3 |
| RoHS | RoHS |
| Part Status | Not For New Designs |
Application & Notes
C2M0160120D by Wolfspeed, Inc. is an N-channel power MOSFET rated at 1200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 196mOhm @ 10A, 20V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | +25V, -10V |
| Technology | SiCFET (Silicon Carbide) |
| Vgs(th) (Max) @ Id | 2.5V @ 500µA |
| Rds On (Max) @ Id, Vgs | 196mOhm @ 10A, 20V |
| Power Dissipation (Max) | 125W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 32.6 nC @ 20 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 527 pF @ 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
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