PC
Rochester Electronics, LLCTO-262-3 Long Leads, I²Pak, TO-262AARoHS

BUZ31H3046XKSA1

MOSFET N-CH 200V 14.5A TO262-3

BUZ31H3046XKSA1 by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-262-3 Long Leads, I²Pak, TO-262AA

Series

SIPMOS®

Status

Obsolete

$0.56 / unit (market reference)

MOQ: 536 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelBUZ31H3046XKSA1
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)200 V
Rds On (Max)200mOhm @ 9A, 5V
Vgs(th) (Max)4V @ 1mA
Input Capacitance (Ciss)1120 pF @ 25 V
Power Dissipation (Max)95W (Tc)
Drive Voltage5V
Supplier Device PackagePG-TO262-3-1
RoHSRoHS
Part StatusObsolete

Application & Notes

BUZ31H3046XKSA1 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-262-3 Long Leads, I²Pak, TO-262AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 200mOhm @ 9A, 5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 1mA
Rds On (Max) @ Id, Vgs200mOhm @ 9A, 5V
Power Dissipation (Max)95W (Tc)
Drain to Source Voltage (Vdss)200 V
Input Capacitance (Ciss) (Max) @ Vds1120 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)5V
Current - Continuous Drain (Id) @ 25°C14.5A (Tc)

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