BUZ21
MOSFET N-CH 100V 21A TO220AB

Transistors Fets Mosfets Single
TO-220-3
SIPMOS®
Obsolete
$1.36 / unit (market reference)
MOQ: 221 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | BUZ21 |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 100 V |
| Rds On (Max) | 85mOhm @ 13A, 10V |
| Vgs(th) (Max) | 4V @ 1mA |
| Input Capacitance (Ciss) | 1300 pF @ 25 V |
| Supplier Device Package | TO-220AB |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
BUZ21 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 85mOhm @ 13A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BUZ21
Alternatives & Replacements
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N-CHANNEL POWER MOSFET
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MOSFET N-CH 650V 7.3A TO220-3
NP80N04MHE-S18-AY
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FDP7045L
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All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 13A, 10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
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