PC
Rochester Electronics, LLCTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

BUK7675-55A,118

NEXPERIA BUK7675-55A - POWER FIE

BUK7675-55A,118 by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Series

Automotive, AEC-Q101, TrenchMOS™

Status

Active

$0.35 / unit (market reference)

MOQ: 865 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelBUK7675-55A,118
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)55 V
Rds On (Max)75mOhm @ 10A, 10V
Vgs(th) (Max)4V @ 1mA
Input Capacitance (Ciss)483 pF @ 25 V
Power Dissipation (Max)62W (Tc)
Drive Voltage10V
Supplier Device PackageD2PAK
RoHSRoHS
Part StatusActive

Application & Notes

BUK7675-55A,118 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 55 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 75mOhm @ 10A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 1mA
Rds On (Max) @ Id, Vgs75mOhm @ 10A, 10V
Power Dissipation (Max)62W (Tc)
Drain to Source Voltage (Vdss)55 V
Input Capacitance (Ciss) (Max) @ Vds483 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C20.3A (Tc)

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