BSS84XHZGG2CR
MOSFET P-CH 60V 230MA DFN1010-3W
Transistors Fets Mosfets Single
3-XFDFN
Automotive, AEC-Q101
Active
$0.53 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rohm Semiconductor |
| Model | BSS84XHZGG2CR |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Rds On (Max) | 5.3Ohm @ 230mA, 10V |
| Vgs(th) (Max) | 2.5V @ 100µA |
| Input Capacitance (Ciss) | 34 pF @ 30 V |
| Power Dissipation (Max) | 1W (Ta) |
| Supplier Device Package | DFN1010-3W |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
BSS84XHZGG2CR by Rohm Semiconductor is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 3-XFDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 5.3Ohm @ 230mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BSS84XHZGG2CR
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA |
| Rds On (Max) @ Id, Vgs | 5.3Ohm @ 230mA, 10V |
| Power Dissipation (Max) | 1W (Ta) |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 34 pF @ 30 V |
| Current - Continuous Drain (Id) @ 25°C | 230mA (Ta) |
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