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Infineon TechnologiesTO-261-4, TO-261AARoHS

BSP88E6327

MOSFET N-CH 240V 350MA SOT223-4

BSP88E6327 by Infineon Technologies
Subcategory

Transistors Fets Mosfets Single

Package

TO-261-4, TO-261AA

Series

SIPMOS®

Status

Obsolete

$0.19 / unit (market reference)

MOQ: 1608 pcs

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Parameters

ParameterValue
BrandInfineon Technologies
ModelBSP88E6327
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)240 V
Rds On (Max)6Ohm @ 350mA, 10V
Vgs(th) (Max)1.4V @ 108µA
Gate Charge (Qg)6.8 nC @ 10 V
Input Capacitance (Ciss)95 pF @ 25 V
Power Dissipation (Max)1.7W (Ta)
Drive Voltage2.8V, 4.5V
Supplier Device PackagePG-SOT223-4
RoHSRoHS
Part StatusObsolete

Application & Notes

BSP88E6327 by Infineon Technologies is an N-channel power MOSFET rated at 240 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-261-4, TO-261AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 6Ohm @ 350mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.4V @ 108µA
Rds On (Max) @ Id, Vgs6Ohm @ 350mA, 10V
Power Dissipation (Max)1.7W (Ta)
Gate Charge (Qg) (Max) @ Vgs6.8 nC @ 10 V
Drain to Source Voltage (Vdss)240 V
Input Capacitance (Ciss) (Max) @ Vds95 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)2.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C350mA (Ta)

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