PC
Infineon TechnologiesTO-261-4, TO-261AARoHS

BSP322PL6327HTSA1

MOSFET P-CH 100V 1A SOT223-4

BSP322PL6327HTSA1 by Infineon Technologies
Subcategory

Transistors Fets Mosfets Single

Package

TO-261-4, TO-261AA

Series

SIPMOS®

Status

Obsolete

$0.19 / unit (market reference)

MOQ: 1608 pcs

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Parameters

ParameterValue
BrandInfineon Technologies
ModelBSP322PL6327HTSA1
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)100 V
Rds On (Max)800mOhm @ 1A, 10V
Vgs(th) (Max)1V @ 380µA
Gate Charge (Qg)16.5 nC @ 10 V
Input Capacitance (Ciss)372 pF @ 25 V
Power Dissipation (Max)1.8W (Ta)
Drive Voltage4.5V, 10V
Supplier Device PackagePG-SOT223-4-21
RoHSRoHS
Part StatusObsolete

Application & Notes

BSP322PL6327HTSA1 by Infineon Technologies is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-261-4, TO-261AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 800mOhm @ 1A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 380µA
Rds On (Max) @ Id, Vgs800mOhm @ 1A, 10V
Power Dissipation (Max)1.8W (Ta)
Gate Charge (Qg) (Max) @ Vgs16.5 nC @ 10 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds372 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C1A (Tc)

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