BSP321PH6327XTSA1
MOSFET P-CH 100V 980MA SOT223-4
Transistors Fets Mosfets Single
TO-261-4, TO-261AA
SIPMOS™
Active
$1.00 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | BSP321PH6327XTSA1 |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 100 V |
| Rds On (Max) | 900mOhm @ 980mA, 10V |
| Vgs(th) (Max) | 4V @ 380µA |
| Gate Charge (Qg) | 12 nC @ 10 V |
| Input Capacitance (Ciss) | 319 pF @ 25 V |
| Power Dissipation (Max) | 1.8W (Ta) |
| Drive Voltage | 10V |
| Supplier Device Package | PG-SOT223-4 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
BSP321PH6327XTSA1 by Infineon Technologies is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-261-4, TO-261AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 900mOhm @ 980mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BSP321PH6327XTSA1
Alternatives & Replacements
View All →BSP318SL6327HTSA1
MOSFET N-CH 60V 2.6A SOT223-4
PMT760EN,115
MOSFET N-CH 100V 900MA SOT223
BSP135L6327HTSA1
MOSFET N-CH 600V 120MA SOT223-4
PHT6N06LT,135
MOSFET N-CH 55V 2.5A SOT223
BSP125L6327HTSA1
MOSFET N-CH 600V 120MA SOT223-4
BSP135L6906HTSA1
MOSFET N-CH 600V 120MA SOT223-4
All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 380µA |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 980mA, 10V |
| Power Dissipation (Max) | 1.8W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 319 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 980mA (Tc) |
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