BSM75GB170DN2HOSA1
IGBT MOD 1700V 110A 625W
Transistors Igbts Modules
Module
Obsolete
$93.33 / unit (market reference)
MOQ: 4 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | BSM75GB170DN2HOSA1 |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 625 W |
| Supplier Device Package | Module |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
BSM75GB170DN2HOSA1 by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BSM75GB170DN2HOSA1
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IGBT MOD 1200V 320A 1100W
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IGBT MOD 1200V 20A 145W
BSM50GB120DLCHOSA1
IGBT MOD 1200V 115A 460W
All Technical Specifications
| Input | Standard |
| Power - Max | 625 W |
| Configuration | Half Bridge |
| NTC Thermistor | No |
| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 75A |
| Current - Collector (Ic) (Max) | 110 A |
| Input Capacitance (Cies) @ Vce | 11 nF @ 25 V |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
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