BSM400D12P2G003
SILICON CARBIDE POWER MODULE. B
Transistors Fets Mosfets Arrays
Module
Active
$1071.43 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rohm Semiconductor |
| Model | BSM400D12P2G003 |
| Package / Case | Module |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Half Bridge) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Vgs(th) (Max) | 4V @ 85mA |
| Input Capacitance (Ciss) | 38000pF @ 10V |
| Power Dissipation (Max) | 2450W (Tc) |
| Supplier Device Package | Module |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
BSM400D12P2G003 by Rohm Semiconductor is an N-channel power MOSFET rated at 1200V (1.2kV) / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max -. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BSM400D12P2G003
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All Technical Specifications
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | Silicon Carbide (SiC) |
| Power - Max | 2450W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 85mA |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 38000pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 400A (Tc) |
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