PC
Diodes IncorporatedTO-226-3, TO-92-3 (TO-226AA)RoHS

BS107P

MOSFET N-CH 200V 120MA TO92-3

BS107P by Diodes Incorporated
Subcategory

Transistors Fets Mosfets Single

Package

TO-226-3, TO-92-3 (TO-226AA)

Status

Active

$0.69 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandDiodes Incorporated
ModelBS107P
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)200 V
Rds On (Max)30Ohm @ 100mA, 5V
Power Dissipation (Max)500mW (Ta)
Drive Voltage2.6V, 5V
Supplier Device PackageTO-92
RoHSRoHS
Part StatusActive

Application & Notes

BS107P by Diodes Incorporated is an N-channel power MOSFET rated at 200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 (TO-226AA) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 30Ohm @ 100mA, 5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs30Ohm @ 100mA, 5V
Power Dissipation (Max)500mW (Ta)
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)2.6V, 5V
Current - Continuous Drain (Id) @ 25°C120mA (Ta)

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