BMS3003-1E
MOSFET P-CH 60V 78A TO220F-3SG
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Transistors Fets Mosfets Single
TO-220-3 Full Pack
Obsolete
$2.05 / unit (market reference)
MOQ: 123 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | BMS3003-1E |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Rds On (Max) | 6.5mOhm @ 39A, 10V |
| Gate Charge (Qg) | 285 nC @ 10 V |
| Input Capacitance (Ciss) | 13200 pF @ 20 V |
| Power Dissipation (Max) | 2W (Ta), 40W (Tc) |
| Drive Voltage | 4V, 10V |
| Supplier Device Package | TO-220F-3SG |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
BMS3003-1E by Rochester Electronics, LLC is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 Full Pack package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 6.5mOhm @ 39A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BMS3003-1E
Alternatives & Replacements
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 39A, 10V |
| Power Dissipation (Max) | 2W (Ta), 40W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 285 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13200 pF @ 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 78A (Ta) |
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