BCR108SE6327BTSA1
TRANS 2NPN PREBIAS 0.25W SOT363
Transistors Bipolar Bjt Arrays Pre Biased
6-VSSOP, SC-88, SOT-363
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | BCR108SE6327BTSA1 |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Power Dissipation (Max) | 250mW |
| Supplier Device Package | PG-SOT363-6 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
BCR108SE6327BTSA1 by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-VSSOP, SC-88, SOT-363 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BCR108SE6327BTSA1
Alternatives & Replacements
View All →BCR10PNH6730XTMA1
TRANS NPN/PNP PREBIAS SOT363
BCR141SH6327XTSA1
TRANS 2NPN PREBIAS 0.25W SOT363
BCR183SH6327XTSA1
TRANS PREBIAS 2PNP 50V SOT363-6
BCR119SH6327XTSA1
TRANS 2NPN PREBIAS 0.25W SOT363
BCR 141S H6327
BIPOLAR DIGITAL TRANSISTOR
BCR35PNH6327XTSA1
TRANS PREBIAS NPN/PNP 50V SOT363
All Technical Specifications
| Power - Max | 250mW |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Resistor - Base (R1) | 2.2kOhms |
| Frequency - Transition | 170MHz |
| Resistor - Emitter Base (R2) | 47kOhms |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector (Ic) (Max) | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
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