BCR183SH6327XTSA1
TRANS PREBIAS 2PNP 50V SOT363-6
Transistors Bipolar Bjt Arrays Pre Biased
6-VSSOP, SC-88, SOT-363
Not For New Designs
$0.04 / unit (market reference)
MOQ: 7105 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | BCR183SH6327XTSA1 |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Power Dissipation (Max) | 250mW |
| Supplier Device Package | PG-SOT363-6 |
| RoHS | RoHS |
| Part Status | Not For New Designs |
Application & Notes
BCR183SH6327XTSA1 by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-VSSOP, SC-88, SOT-363 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BCR183SH6327XTSA1
Alternatives & Replacements
View All →BCR10PNH6730XTMA1
TRANS NPN/PNP PREBIAS SOT363
BCR141SH6327XTSA1
TRANS 2NPN PREBIAS 0.25W SOT363
BCR119SH6327XTSA1
TRANS 2NPN PREBIAS 0.25W SOT363
BCR 141S H6327
BIPOLAR DIGITAL TRANSISTOR
BCR35PNH6327XTSA1
TRANS PREBIAS NPN/PNP 50V SOT363
BCR133SH6327XTSA1
TRANS PREBIAS 2NPN 50V SOT363-6
All Technical Specifications
| Power - Max | 250mW |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Resistor - Base (R1) | 10kOhms |
| Frequency - Transition | 200MHz |
| Resistor - Emitter Base (R2) | 10kOhms |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector (Ic) (Max) | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
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