APT102GA60B2
IGBT 600V 183A 780W TO247
Transistors Igbts Single
TO-247-3 Variant
POWER MOS 8™
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Microchip Technology |
| Model | APT102GA60B2 |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 780 W |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
APT102GA60B2 by Microchip Technology is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 Variant package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for APT102GA60B2
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All Technical Specifications
| IGBT Type | PT |
| Input Type | Standard |
| Gate Charge | 294 nC |
| Power - Max | 780 W |
| Test Condition | 400V, 62A, 4.7Ohm, 15V |
| Switching Energy | 1.354mJ (on), 1.614mJ (off) |
| Td (on/off) @ 25°C | 28ns/212ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 62A |
| Current - Collector (Ic) (Max) | 183 A |
| Current - Collector Pulsed (Icm) | 307 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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