APT33GF120B2RDQ2G
IGBT 1200V 64A 357W TMAX
Transistors Igbts Single
TO-247-3 Variant
Active
$15.73 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Microchip Technology |
| Model | APT33GF120B2RDQ2G |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 357 W |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
APT33GF120B2RDQ2G by Microchip Technology is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 Variant package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for APT33GF120B2RDQ2G
Alternatives & Replacements
View All →APT65GP60B2G
IGBT 600V 100A 833W TMAX
IXYX40N450HV
IGBT
APT50GT120B2RDLG
IGBT 1200V 106A 694W TO-247
APT50GN120B2G
IGBT 1200V 134A 543W TO-247
APT64GA90B2D30
IGBT 900V 117A 500W TO-247
All Technical Specifications
| IGBT Type | NPT |
| Input Type | Standard |
| Gate Charge | 170 nC |
| Power - Max | 357 W |
| Test Condition | 800V, 25A, 4.3Ohm, 15V |
| Switching Energy | 1.315mJ (on), 1.515mJ (off) |
| Td (on/off) @ 25°C | 14ns/185ns |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 25A |
| Current - Collector (Ic) (Max) | 64 A |
| Current - Collector Pulsed (Icm) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.