Advanced Linear Devices Inc.8-SOIC (0.154", 3.90mm Width)RoHS
ALD212900SAL
MOSFET 2N-CH 10.6V 0.08A 8SOIC
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
8-SOIC (0.154", 3.90mm Width)
Series
EPAD®, Zero Threshold™
Status
Active
$5.45 / unit (market reference)
MOQ: 50 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Advanced Linear Devices Inc. |
| Model | ALD212900SAL |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 0°C ~ 70°C (TJ) |
| FET Type | 2 N-Channel (Dual) Matched Pair |
| Drain to Source Voltage (Vdss) | 10.6V |
| Rds On (Max) | 14Ohm |
| Vgs(th) (Max) | 20mV @ 20µA |
| Input Capacitance (Ciss) | 30pF @ 5V |
| Power Dissipation (Max) | 500mW |
| Supplier Device Package | 8-SOIC |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
ALD212900SAL by Advanced Linear Devices Inc. is an N-channel power MOSFET rated at 10.6V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 14Ohm. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) Matched Pair |
| FET Feature | Logic Level Gate |
| Power - Max | 500mW |
| Vgs(th) (Max) @ Id | 20mV @ 20µA |
| Rds On (Max) @ Id, Vgs | 14Ohm |
| Drain to Source Voltage (Vdss) | 10.6V |
| Input Capacitance (Ciss) (Max) @ Vds | 30pF @ 5V |
| Current - Continuous Drain (Id) @ 25°C | 80mA |
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