Rochester Electronics, LLCTO-220-3RoHS
2SK4197FS
MOSFET N-CH 600V 3.3A TO220-3
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Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-220-3
Status
Obsolete
Datasheet
$0.57 / unit (market reference)
MOQ: 525 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | 2SK4197FS |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 600 V |
| Rds On (Max) | 3.25Ohm @ 1.8A, 10V |
| Gate Charge (Qg) | 11 nC @ 10 V |
| Input Capacitance (Ciss) | 260 pF @ 30 V |
| Power Dissipation (Max) | 2W (Ta), 28W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | TO-220-3 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
2SK4197FS by Rochester Electronics, LLC is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.25Ohm @ 1.8A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for 2SK4197FS
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 3.25Ohm @ 1.8A, 10V |
| Power Dissipation (Max) | 2W (Ta), 28W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 260 pF @ 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Tc) |
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