Toshiba Semiconductor and StorageTO-236-3, SC-59, SOT-23-3RoHS
2SK208-O(TE85L,F)
JFET N-CH 50V SC59
Category
Subcategory
Transistors Jfets
Package
TO-236-3, SC-59, SOT-23-3
Status
Active
Datasheet
$0.52 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | 2SK208-O(TE85L,F) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 125°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) | 8.2pF @ 10V |
| Power Dissipation (Max) | 100 mW |
| Supplier Device Package | SC-59 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
2SK208-O(TE85L,F) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at - / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for 2SK208-O(TE85L,F)
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All Technical Specifications
| FET Type | N-Channel |
| Power - Max | 100 mW |
| Current Drain (Id) - Max | 6.5 mA |
| Voltage - Breakdown (V(BR)GSS) | 50 V |
| Voltage - Cutoff (VGS off) @ Id | 400 mV @ 100 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 600 µA @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8.2pF @ 10V |
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