onsemiTO-236-3, SC-59, SOT-23-3RoHS
2SK3666-3-TB-E
JFET N-CH 10MA 200MW 3CP
Category
Subcategory
Transistors Jfets
Package
TO-236-3, SC-59, SOT-23-3
Status
Obsolete
$0.06 / unit (market reference)
MOQ: 4699 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | 2SK3666-3-TB-E |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) | 4pF @ 10V |
| Power Dissipation (Max) | 200 mW |
| Supplier Device Package | SMCP |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
2SK3666-3-TB-E by onsemi is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N-Channel |
| Power - Max | 200 mW |
| Resistance - RDS(On) | 200 Ohms |
| Current Drain (Id) - Max | 10 mA |
| Drain to Source Voltage (Vdss) | 30 V |
| Voltage - Cutoff (VGS off) @ Id | 180 mV @ 1 µA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 1.2 mA @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4pF @ 10V |
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